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STMicroelectronics STGW100H65FB2-4, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

RS 제품 번호:: 212-2107
제조사 부품 번호:: STGW100H65FB2-4
제조업체:: STMicroelectronics

STMicroelectronics STGW100H65FB2-4, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩23,161.60

재고있음

568 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 6	₩11,580.80	₩23,161.60
8 - 14	₩11,298.80	₩22,597.60
16 +	₩11,120.20	₩22,240.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 212-2107
제조사 부품 번호:: STGW100H65FB2-4
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Maximum Continuous Collector Current Ic	145A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	441W
	Package Type	TO-247-4
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	4
	Switching Speed	1MHz
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Operating Temperature	175°C
	Width	21.1 mm
	Series	STG
	Height	5.1mm
	Length	15.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Maximum Continuous Collector Current Ic 145A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 441W
	Package Type TO-247-4
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 4
	Switching Speed 1MHz
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Operating Temperature 175°C
	Width 21.1 mm
	Series STG
	Height 5.1mm
	Length 15.9mm
	Standards/Approvals RoHS
	Automotive Standard No

DataSheet - STGW100H65FB2-4

IGBT

The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

STMicroelectronics STGW100H65FB2-4, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

IGBT

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