제조사부품번호

STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 4-Pin TO-247, Through Hole

RS 제품 번호:: 206-6063
제조사 부품 번호:: STGW75H65DFB2-4
제조업체:: STMicroelectronics

STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 4-Pin TO-247, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩330,673.20

재고있음

60 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩11,022.44	₩330,690.12
60 - 90	₩10,691.56	₩320,763.72
120 +	₩10,371.96	₩311,141.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 206-6063
제조사 부품 번호:: STGW75H65DFB2-4
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Maximum Continuous Collector Current Ic	115A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	357W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	4
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Width	21.1 mm
	Height	5.1mm
	Standards/Approvals	RoHS
	Series	STG
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Maximum Continuous Collector Current Ic 115A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 357W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 4
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Width 21.1 mm
	Height 5.1mm
	Standards/Approvals RoHS
	Series STG
	Automotive Standard No

Datasheet - STGW75H65DFB2-4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 4-Pin TO-247, Through Hole

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