onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

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RS 제품 번호:
195-8770
제조사 부품 번호:
NXH100B120H3Q0STG
제조업체:
onsemi
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브랜드

onsemi

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

186 W

Configuration

Dual

Package Type

Q0BOOST

Mounting Type

Surface Mount

Channel Type

N

Pin Count

22

Transistor Configuration

Dual

Dimensions

66.2 x 32.8 x 11.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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