onsemi FGH75T65SQDNL4, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole
- RS 제품 번호:
- 181-1929
- 제조사 부품 번호:
- FGH75T65SQDNL4
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩14,605.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 112 | ₩14,605.50 |
| 113 - 224 | ₩14,352.00 |
| 225 + | ₩14,079.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 181-1929
- 제조사 부품 번호:
- FGH75T65SQDNL4
- 제조업체:
- onsemi
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.43V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop IV | |
| Standards/Approvals | Pb-Free, Halide Free | |
| Automotive Standard | No | |
| Energy Rating | 160mJ | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.43V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop IV | ||
Standards/Approvals Pb-Free, Halide Free | ||
Automotive Standard No | ||
Energy Rating 160mJ | ||
- COO (Country of Origin):
- CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology
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