onsemi, Type P-Channel IGBT, 40 A 1200 V, 4-Pin TO-247, Through Hole

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

공급 부족
글로벌 공급 부족으로 인해 언제 재입고될지 모릅니다.
RS 제품 번호:
178-4321
제조사 부품 번호:
FGH40T120SQDNL4
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

4

Maximum Collector Emitter Saturation Voltage VceSAT

1.78V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop

Automotive Standard

No

COO (Country of Origin):
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices

Applications

Solar inverter UPS Welding

관련된 링크들