Vishay SI7489DP-T1-E3 IGBT

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Subtotal (1 pack of 5 units)*

₩19,570.80

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  • 추가로 2025년 12월 29일 부터 30 개 단위 배송
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한팩당*
5 - 745₩3,914.16₩19,570.80
750 - 1495₩3,820.16₩19,100.80
1500 +₩3,756.24₩18,781.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
180-7802
제조사 부품 번호:
SI7489DP-T1-E3
제조업체:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• New low thermal resistance PowerPAK package with low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET

Applications


• Adaptor switches
• Battery switches
• Load switches
• Notebook computers

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Halogen-free

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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