onsemi, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

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Subtotal (1 tube of 30 units)*

₩162,103.50

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수량
한팩당
Per Tube*
30 - 30₩5,403.45₩162,085.95
60 - 90₩5,284.50₩158,552.55
120 +₩5,167.50₩155,025.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
178-4259
제조사 부품 번호:
FGH60T65SQD-F155
제조업체:
onsemi
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브랜드

onsemi

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

333W

Package Type

TO-247 G03

Mount Type

Through Hole

Channel Type

Type P

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

Field Stop 4th Generation

Standards/Approvals

RoHS

Automotive Standard

No

Energy Rating

50mJ

COO (Country of Origin):
CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A

High Input Impedance

Fast Switching

Tighten Parameter Distribution

Applications

Solar Inverter, UPS, Welder, Telecom, ESS, PFC

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