onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS 제품 번호:
- 178-4259
- 제조사 부품 번호:
- FGH60T65SQD-F155
- 제조업체:
- onsemi
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩156,284.40
재고있음
- 420 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩5,209.48 | ₩156,267.48 |
| 60 - 90 | ₩5,094.80 | ₩152,860.92 |
| 120 + | ₩4,982.00 | ₩149,460.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-4259
- 제조사 부품 번호:
- FGH60T65SQD-F155
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 333 W | |
| Package Type | TO-247 G03 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 3813pF | |
| Energy Rating | 50mJ | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 333 W | ||
Package Type TO-247 G03 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 3813pF | ||
Energy Rating 50mJ | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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