STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 168-7095
- 제조사 부품 번호:
- STGW20H60DF
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 168-7095
- 제조사 부품 번호:
- STGW20H60DF
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.15mm | |
| Standards/Approvals | RoHS | |
| Series | Trench Gate Field Stop | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 20.15mm | ||
Standards/Approvals RoHS | ||
Series Trench Gate Field Stop | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- STMicroelectronics STGW20H60DF IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40V60DF IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW20V60DF IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole