STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

₩149,967.60

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Per Tube*
30 - 30₩4,998.92₩149,984.52
60 - 270₩4,891.76₩146,735.88
300 +₩4,401.08₩132,049.32

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
168-7003
제조사 부품 번호:
STGW30V60F
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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