제조사부품번호

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 165-5481
제조사 부품 번호:: IKW20N60H3FKSA1
제조업체:: Infineon

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩86,743.20

재고있음

150 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
30 - 120	₩2,891.44	₩86,743.20
150 +	₩2,601.92	₩78,057.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-5481
제조사 부품 번호:: IKW20N60H3FKSA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	170 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	100kHz
	Transistor Configuration	Single
	Dimensions	16.13 x 5.21 x 21.1mm
	Maximum Operating Temperature	+175 °C
	Energy Rating	1.07mJ
	Minimum Operating Temperature	-40 °C
	Gate Capacitance	1100pF

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 170 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 100kHz
	Transistor Configuration Single
	Dimensions 16.13 x 5.21 x 21.1mm
	Maximum Operating Temperature +175 °C
	Energy Rating 1.07mJ
	Minimum Operating Temperature -40 °C
	Gate Capacitance 1100pF

COO (Country of Origin):: CN

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1

This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits

• Utilises TRENCHSTOP technology, delivering low VCEsat
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation

Applications

• Utilised in uninterruptible power supplies for reliable operation
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?

The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?

It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?

The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.