제조사부품번호

Infineon IKW50N60H3FKSA1, Type N-Channel IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 897-7239
제조사 부품 번호:: IKW50N60H3FKSA1
제조업체:: Infineon

Infineon IKW50N60H3FKSA1, Type N-Channel IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩16,299.60

일시적 품절

2026년 6월 15일 부터 240 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 6	₩8,149.80	₩16,299.60
8 +	₩7,943.00	₩15,886.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 897-7239
제조사 부품 번호:: IKW50N60H3FKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	100A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	333W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	273ns
	Maximum Collector Emitter Saturation Voltage VceSAT	2.3V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No
	Energy Rating	2.55mJ

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 100A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 333W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 273ns
	Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No
	Energy Rating 2.55mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW50N60H3FKSA1, Type N-Channel IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

Infineon TrenchStop IGBT Transistors, 600 and 650V

IGBT Discretes & Modules, Infineon

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