onsemi NFAM3065L4BL, Type N-Channel 3 Phase IGBT, 30 A 650 V, 39-Pin DIP-39, Through Hole
- RS 제품 번호:
- 277-038
- 제조사 부품 번호:
- NFAM3065L4BL
- 제조업체:
- onsemi
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View bulk pricing optionsSubtotal (1 unit)*
₩68,542.50
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- 90 개 단위 배송 준비 완료
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- RS 제품 번호:
- 277-038
- 제조사 부품 번호:
- NFAM3065L4BL
- 제조업체:
- onsemi
사양
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 113W | |
| Package Type | DIP-39 | |
| Configuration | 3 Phase | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 39 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.6mm | |
| Length | 54.5mm | |
| Standards/Approvals | Pb-Free, UL1557 (File No.339285), RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 113W | ||
Package Type DIP-39 | ||
Configuration 3 Phase | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 39 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.6mm | ||
Length 54.5mm | ||
Standards/Approvals Pb-Free, UL1557 (File No.339285), RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- VN
The ON Semiconductor Integrated Inverter Power Module features a high-side gate driver, LVIC, six IGBTs, and a temperature sensor (VTS), making it ideal for driving PMSM, BLDC, and AC asynchronous motors. The IGBTs are arranged in a three-phase bridge with separate emitter connections for the lower legs, allowing maximum flexibility in control algorithm selection.
Active logic interface
Built in undervoltage protection
Integrated bootstrap diodes and resistors
Separate low side IGBT emitter connections for individual current sensing of each phase
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