Transcend MTE670T-I M.2 (2280) Internal SSD

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  • 2026년 6월 01일 부터 배송 준비 완료
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RS 제품 번호:
262-9677
제조사 부품 번호:
TS128GMTE670T-I
제조업체:
Transcend
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모두 선택

브랜드

Transcend

Model Number

MTE670T-I

Product Type

SSD

Internal/External

Internal

Industrial Grade

Yes

Form Factor

M.2 (2280)

NAND Type

3D TLC

Interface Type

PCIe Gen 3.0 x4 NVMe

Self-Destruct

No

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

22mm

Width

2.23mm

Length

80mm

Standards/Approvals

No

제외

Transcend Solid State Drive, 128GB Capacity, NVMe PCIe Gen 3 x 4 Interface - TS128GMTE670T-I


This solid state drive delivers high-speed data transfer and efficiency. With a compact M.2 form factor measuring 80mm x 22mm x 2.23mm, it is designed for internal SSD storage in various devices. The drive's capacity stands at 128GB, making it ideal for applications requiring rapid access to data.

Features & Benefits


• Utilises advanced 112-layer 3D NAND technology for improved efficiency

• Delivers sequential read speeds of up to 2,100 MB/s

• Endurance rating of 3K Programme/Erase cycles for reliability

• Supports extended operating temperatures from -40°C to 85°C

• Implements built-in LDPC ECC functionality for data integrity

• Space-saving M.2 form factor optimised for mobile devices

Applications


• Ideal for automation systems requiring rapid data processing

• Suitable for electronics in high-temperature environments

• Utilised in mechanical systems that demand compact SSD solutions

• Employed in industrial settings for reliable data storage

What are the operational temperature limits for optimal performance?


The device functions effectively in temperatures ranging from -40°C to 85°C, ensuring reliability in extreme conditions.

How does the drive's endurance rating impact long-term usage?


With a rating of 3K Programme/Erase cycles, it ensures durability for frequent data writing and rewriting without significant degradation.

What benefits does the 3D NAND flash technology offer?


The 3D NAND technology enhances storage density, allowing for faster performance and improved power efficiency compared to traditional flash memory.

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