Infineon, Half Bridge, 420 mA 8-Pin 600 V, SOIC
- RS 제품 번호:
- 258-3930
- 제조사 부품 번호:
- IR2111STRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩2,773,000.00
일시적 품절
- 2026년 5월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,109.20 | ₩2,771,590.00 |
| 5000 - 5000 | ₩1,086.64 | ₩2,716,130.00 |
| 7500 + | ₩1,064.08 | ₩2,662,080.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3930
- 제조사 부품 번호:
- IR2111STRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420mA | |
| Pin Count | 8 | |
| Fall Time | 40ns | |
| Package Type | SOIC | |
| Driver Type | Half Bridge | |
| Rise Time | 130ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | IR2111(S) & (PbF) | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420mA | ||
Pin Count 8 | ||
Fall Time 40ns | ||
Package Type SOIC | ||
Driver Type Half Bridge | ||
Rise Time 130ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series IR2111(S) & (PbF) | ||
Automotive Standard No | ||
The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set dead time
High side output in phase with input
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