The ON Semiconductor Isolated High Current IGBT/MOSFET Gate Driver is high−current single channel. IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide−body SOIC−8 package.

High Peak Output Current (+6.5 A/−6.5 A)

Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)

Short Propagation Delays with Accurate Matching

IGBT/MOSFET Gate Clamping during Short Circuit

IGBT/MOSFET Gate Active Pull Down

Tight UVLO Thresholds for Bias Flexibility

Wide Bias Voltage Range including Negative VEE2 (Version B)

3.3 V, 5 V, and 15 V Logic Input

5 kVrms Galvanic Isolation

High Transient Immunity

High Electromagnetic Immunity

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Output Current	6.5A
	Pin Count	16
	Fall Time	16ns
	Package Type	SOIC
	Driver Type	MOSFET
	Rise Time	19ns
	Minimum Supply Voltage	5V
	Maximum Supply Voltage	5V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	NCP51
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Output Current 6.5A
	Pin Count 16
	Fall Time 16ns
	Package Type SOIC
	Driver Type MOSFET
	Rise Time 19ns
	Minimum Supply Voltage 5V
	Maximum Supply Voltage 5V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series NCP51
	Standards/Approvals No
	Automotive Standard No

onsemi NCP51561BADWR2G MOSFET Gate Driver, 6.5 A 16-Pin 5 V, SOIC

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