STMicroelectronics MOSFET Gate Driver, 4 A 36-Pin 5.5 V, SO-36W

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₩4,647,360.00

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  • 2026년 9월 11일 부터 배송
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1000 - 1000₩4,647.36₩4,647,924.00
2000 - 2000₩4,555.24₩4,555,052.00
3000 +₩4,463.12₩4,463,872.00

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RS 제품 번호:
239-5533
제조사 부품 번호:
STGAP2SICDTR
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

MOSFET

Output Current

4A

Pin Count

36

Fall Time

30ns

Package Type

SO-36W

Driver Type

MOSFET

Minimum Supply Voltage

3.1V

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

STGAP

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power applications such as power conversion and industrial motor drivers inverters. The separated output pins allow to independently optimize turn-on and turn-off by using dedicated gate resistors, while the Miller CLAMP function allows avoiding gate spikes during fast commutations in half-bridge topologies. The device integrates protection functions: dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to easily design high reliability systems.

4 A Miller CLAMP

UVLO function

Configurable interlocking function

Dedicated SD and BRAKE pins

Gate driving voltage up to 26 V

3.3 V, 5 V TTL/CMOS inputs with hysteresis

Temperature shutdown protection

Standby function

6 kV galvanic isolation

Wide Body SO-36W

In half-bridge topologies the interlocking function prevents outputs from being high at the same time, avoiding shoot-through conditions in case of wrong logic input commands. The interlocking function can be disabled by a dedicated configuration pin, allowing independent and parallel operation of the two channels. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption.

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