onsemi, IGBT, 6.5 A 8-Pin 20 V, SOIC
- RS 제품 번호:
- 230-9047
- 제조사 부품 번호:
- NCD57090EDWR2G
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩2,410,160.00
마지막 RS 재고
- 최종적인 2,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩2,410.16 | ₩2,409,220.00 |
| 2000 - 9000 | ₩2,361.28 | ₩2,361,092.00 |
| 10000 + | ₩2,314.28 | ₩2,313,904.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 230-9047
- 제조사 부품 번호:
- NCD57090EDWR2G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Fall Time | 13ns | |
| Package Type | SOIC | |
| Number of Outputs | 5 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Series | NCD57090 | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type IGBT Module | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Fall Time 13ns | ||
Package Type SOIC | ||
Number of Outputs 5 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Series NCD57090 | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor series NCD57090E are high−current single channel IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090E). NCD57090E accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V.
Improves system efficiency
Short Propagation Delays with Accurate Matching
Improves PWM signal integrity
High Transient & Electromagnetic Immunity
Ruggedness in fast slew rate high voltage and high current switching applications
5 KVrms On-Chip Galvanic Isolation
Saves cost and board space while offering improved performance compared to opto-drivers
Wide Bias Voltage Ranges and Input Voltage Range
Offers system design flexibility and allows the usage of commonly available system voltage rails
Active Miller Clamp or Negative Gate Voltage or Split Outputs
Offers a choice in selecting the right feature in a compact package
관련된 링크들
- onsemi NCD57090EDWR2G, IGBT, 6.5 A 8-Pin 20 V, SOIC
- onsemi, IGBT, 6.5 A 8-Pin 20 V, SOIC
- onsemi NCD57090DDWR2G, IGBT, 6.5 A 8-Pin 20 V, SOIC
- onsemi, IGBT, 6.5 A 8-Pin 22 V, SOIC
- onsemi NCD57090BDWR2G, IGBT, 6.5 A 8-Pin 22 V, SOIC
- onsemi NCD57090ADWR2G, IGBT, 6.5 A 8-Pin 22 V, SOIC
- onsemi NCD57090CDWR2G, IGBT, 6.5 A 8-Pin 22 V, SOIC
- onsemi, IGBT, 7 A 8-Pin 20 V, SOIC