Infineon IRS21844STRPBF MOSFET Gate Driver, 1.9 A 14-Pin 20V, SOIC
- RS 제품 번호:
- 226-6206
- 제조사 부품 번호:
- IRS21844STRPBF
- 제조업체:
- Infineon
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Subtotal (5 units, in packs of 5)*
₩18,580.00
재고있음
- 870 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 + | ₩3,716.00 | ₩18,580.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 226-6206
- 제조사 부품 번호:
- IRS21844STRPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 1.9A | |
| Pin Count | 14 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | IRS | |
| Width | 3.99mm | |
| Standards/Approvals | No | |
| Length | 8.74mm | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver | ||
Output Current 1.9A | ||
Pin Count 14 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 40ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series IRS | ||
Width 3.99mm | ||
Standards/Approvals No | ||
Length 8.74mm | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon IRS Series Gate Driver, 10V Minimum Supply Voltage, 1.9A Output Current - IRS21844STRPBF
This gate driver provides dual-channel MOSFET drive for power switching circuits, designed for surface-mount integration. It accepts supply voltages in a 10V-20V range and delivers controlled drive to two outputs, supporting efficient switching in industrial and power electronics contexts while operating across a wide ambient temperature span.
Features and Benefits:
• 1.9A output current delivers strong drive per channel for fast switching
• Rise time 40ns minimises switching transition duration for improved efficiency
• Fall time 35ns reduces turn-off losses during high-speed operation
• 14-pin package supports Compact surface mounting for dense assemblies
• Operating range -40°C to125°C enables use across varied thermal environments
• Rise time 40ns minimises switching transition duration for improved efficiency
• Fall time 35ns reduces turn-off losses during high-speed operation
• 14-pin package supports Compact surface mounting for dense assemblies
• Operating range -40°C to125°C enables use across varied thermal environments
Applications
• Suitable for MOSFET gate driver 10V-20V 2-output SOIC control stages
• Ideal for IRS series gate driver 1.9A output power circuits
• Used with high-speed MOSFET driver 1.9 amp per channel switching designs
• Can be used for Compact surface-mount gate driver 14-pin SOIC layouts
• Used for industrial gate driver 10V minimum supply power modules
• Ideal for IRS series gate driver 1.9A output power circuits
• Used with high-speed MOSFET driver 1.9 amp per channel switching designs
• Can be used for Compact surface-mount gate driver 14-pin SOIC layouts
• Used for industrial gate driver 10V minimum supply power modules
What package type should be considered for PCB footprint design?
The device is supplied in an SOIC package and requires a 14-pin footprint compatible with surface-mount assembly.
What pin count impacts routing and gate connections?
There are 14 pins which allocate separate connections for dual outputs and supply lines affecting board routing.
How does temperature capability affect long-term deployment?
The maximum operating temperature is 125°C and the minimum is -40°C, supporting use in elevated-temperature and cold environments without specification change.
What mounting approach is required during assembly?
Surface-mount placement is required due to the devices mount type and package format.
Which driver type classification applies to switching topology selection?
The unit functions as a MOSFET driver intended for direct gate driving in power electronic topologies.
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