Microchip MOSFET Gate Driver 1, 9 A 8-Pin 18 V, PDIP
- RS 제품 번호:
- 209-7721
- 제조사 부품 번호:
- TC4422EPA
- 제조업체:
- Microchip
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- RS 제품 번호:
- 209-7721
- 제조사 부품 번호:
- TC4422EPA
- 제조업체:
- Microchip
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Gate Driver | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Fall Time | 60ns | |
| Package Type | PDIP | |
| Number of Outputs | 5 | |
| Driver Type | MOSFET | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 4.5V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 18V | |
| Minimum Operating Temperature | 0°C | |
| Maximum Operating Temperature | 70°C | |
| Height | 4.06mm | |
| Series | TC4422 | |
| Length | 10.16mm | |
| Width | 6.6 mm | |
| Standards/Approvals | No | |
| Mount Type | Through Hole | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Gate Driver | ||
Output Current 9A | ||
Pin Count 8 | ||
Fall Time 60ns | ||
Package Type PDIP | ||
Number of Outputs 5 | ||
Driver Type MOSFET | ||
Rise Time 60ns | ||
Minimum Supply Voltage 4.5V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 18V | ||
Minimum Operating Temperature 0°C | ||
Maximum Operating Temperature 70°C | ||
Height 4.06mm | ||
Series TC4422 | ||
Length 10.16mm | ||
Width 6.6 mm | ||
Standards/Approvals No | ||
Mount Type Through Hole | ||
Automotive Standard No | ||
The Microchip TC4422EPA has high current drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4kV of electrostatic discharge. The TC4422EPA inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.
Tough CMOS ™ Construction
High Peak Output Current
Fast Rise and Fall Times
Short Internal Delays
Low Output Impedance
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