onsemi NCP51705MNTXG MOSFET Gate Driver 1, 6 A 24-Pin 22V, QFN
- RS 제품 번호:
- 178-4261
- 제조사 부품 번호:
- NCP51705MNTXG
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 178-4261
- 제조사 부품 번호:
- NCP51705MNTXG
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6A | |
| Pin Count | 24 | |
| Fall Time | 15ns | |
| Package Type | QFN | |
| Number of Outputs | 5 | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | NCP51705 | |
| Height | 950μm | |
| Length | 4mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Output Current 6A | ||
Pin Count 24 | ||
Fall Time 15ns | ||
Package Type QFN | ||
Number of Outputs 5 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series NCP51705 | ||
Height 950μm | ||
Length 4mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
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