Infineon 6EDL04I065NTXUMA1 High Side Gate Driver 6, 165 mA 28-Pin 17.5 V, PG-DSO-28
- RS 제품 번호:
- 351-980
- 제조사 부품 번호:
- 6EDL04I065NTXUMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩10,031.68
일시적 품절
- 1,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩5,015.84 | ₩10,033.56 |
| 20 - 198 | ₩4,515.76 | ₩9,033.40 |
| 200 - 998 | ₩4,162.32 | ₩8,326.52 |
| 1000 - 1998 | ₩3,861.52 | ₩7,723.04 |
| 2000 + | ₩3,466.72 | ₩6,931.56 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-980
- 제조사 부품 번호:
- 6EDL04I065NTXUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 165mA | |
| Pin Count | 28 | |
| Package Type | PG-DSO-28 | |
| Fall Time | 26ns | |
| Number of Outputs | 6 | |
| Driver Type | High Side | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 13V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 17.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 6EDL04 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver Module | ||
Output Current 165mA | ||
Pin Count 28 | ||
Package Type PG-DSO-28 | ||
Fall Time 26ns | ||
Number of Outputs 6 | ||
Driver Type High Side | ||
Rise Time 60ns | ||
Minimum Supply Voltage 13V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 17.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 6EDL04 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon Three-phase gate driver 2nd generation is a full bridge driver to control power devices like IGBTs in 3-phase systems with a maximum blocking voltage. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions
Higher efficiency
Increased reliability
Easy of design
관련된 링크들
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