onsemi NCP51752DBDR2G, Isolated Gate Driver 1, 9 A 8-Pin 20 V, SOIC-8
- RS 제품 번호:
- 277-082
- 제조사 부품 번호:
- NCP51752DBDR2G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩17,361.80
일시적 품절
- 2026년 7월 30일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩3,472.36 | ₩17,359.92 |
| 50 - 95 | ₩3,297.52 | ₩16,485.72 |
| 100 - 495 | ₩3,055.00 | ₩15,278.76 |
| 500 - 995 | ₩2,814.36 | ₩14,071.80 |
| 1000 + | ₩2,710.96 | ₩13,551.04 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 277-082
- 제조사 부품 번호:
- NCP51752DBDR2G
- 제조업체:
- onsemi
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Gate Driver Module | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 | |
| Fall Time | 8.3ns | |
| Driver Type | Isolated Gate Driver | |
| Number of Outputs | 1 | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | NCP51752 | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | CQC GB4943.1-2011, SGS FIMO IEC 62386-1, UL1577, AEC-Q100-011 | |
| Length | 5mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Gate Driver Module | ||
Output Current 9A | ||
Pin Count 8 | ||
Package Type SOIC-8 | ||
Fall Time 8.3ns | ||
Driver Type Isolated Gate Driver | ||
Number of Outputs 1 | ||
Rise Time 22ns | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series NCP51752 | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals CQC GB4943.1-2011, SGS FIMO IEC 62386-1, UL1577, AEC-Q100-011 | ||
Length 5mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Isolated Single Channel Gate Driver is designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. It offers short and matched propagation delays for precise control. To enhance reliability, dV/dt immunity, and achieve even faster turn-off, the driver incorporates an innovative embedded negative bias rail mechanism. This feature improves performance and ensures efficient, high-speed operation in demanding power applications.
Minimum CMTI of 200 V/ns dV/dt
Negative 5−V handling capability on input pins
SGS FIMO certification per IEC 62386−1
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