Infineon 4 kB Serial-I2C FRAM 8-Pin SOIC-8, FM24CL04B-G
- RS 제품 번호:
- 273-7378
- 제조사 부품 번호:
- FM24CL04B-G
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 97 units)*
₩234,356.85
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 97 - 97 | ₩2,416.05 | ₩234,319.80 |
| 194 + | ₩2,100.15 | ₩203,751.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7378
- 제조사 부품 번호:
- FM24CL04B-G
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.65V | |
| Automotive Standard | No | |
| Minimum Operating Temperature | -40°C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.65V | ||
Automotive Standard No | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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