제조사부품번호

Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN, FM24CL16B-DG

RS 제품 번호:: 125-4211
제조사 부품 번호:: FM24CL16B-DG
제조업체:: Infineon

Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN, FM24CL16B-DG

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩17,108.00

재고있음

25 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 15	₩3,421.60	₩17,108.00
20 - 35	₩3,346.40	₩16,732.00
40 +	₩3,274.96	₩16,374.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 125-4211
제조사 부품 번호:: FM24CL16B-DG
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Memory Size	16kB
	Product Type	FRAM
	Organisation	2K x 8 bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Mount Type	Surface
	Maximum Clock Frequency	1MHz
	Package Type	DFN
	Pin Count	8
	Height	0.75mm
	Length	4.5mm
	Standards/Approvals	No
	Width	4 mm
	Maximum Operating Temperature	85°C
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Automotive Standard	AEC-Q100
	Number of Words	2k
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.65V

	모두 선택
	브랜드 Infineon
	Memory Size 16kB
	Product Type FRAM
	Organisation 2K x 8 bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Mount Type Surface
	Maximum Clock Frequency 1MHz
	Package Type DFN
	Pin Count 8
	Height 0.75mm
	Length 4.5mm
	Standards/Approvals No
	Width 4 mm
	Maximum Operating Temperature 85°C
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Automotive Standard AEC-Q100
	Number of Words 2k
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.65V

FM24CL16B Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN, FM24CL16B-DG

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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