Infineon NOR 1 GB Parallel GL-T MIRRORBITTM Flash Parallel 48-Pin TSOP-56
- RS 제품 번호:
- 273-5429
- 제조사 부품 번호:
- S29GL01GT10FHI010
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩22,278.00
재고있음
- 32 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩22,278.00 |
| 10 + | ₩21,037.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5429
- 제조사 부품 번호:
- S29GL01GT10FHI010
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 1GB | |
| Product Type | GL-T MIRRORBITTM Flash Parallel | |
| Interface Type | Parallel | |
| Package Type | TSOP-56 | |
| Pin Count | 48 | |
| Organisation | 120MB | |
| Maximum Clock Frequency | 5MHz | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Maximum Random Access Time | 130ns | |
| Supply Current | 100mA | |
| Number of Bits per Word | 16 | |
| Series | S29GL | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 1GB | ||
Product Type GL-T MIRRORBITTM Flash Parallel | ||
Interface Type Parallel | ||
Package Type TSOP-56 | ||
Pin Count 48 | ||
Organisation 120MB | ||
Maximum Clock Frequency 5MHz | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Maximum Random Access Time 130ns | ||
Supply Current 100mA | ||
Number of Bits per Word 16 | ||
Series S29GL | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.
20 year data retention
Advanced sector protection
512 byte programming buffer
100000 program and erase cycles
Asynchronous 32 byte page read
Common flash interface parameter table
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