Nexperia PBHV8118T,215 Transistor, 1 A NPN, 180 V, 3-Pin SOT-23
- RS 제품 번호:
- 816-0649
- 제조사 부품 번호:
- PBHV8118T,215
- 제조업체:
- Nexperia
대량 구매 할인 기용 가능
Subtotal (1 pack of 30 units)*
₩14,551.20
일시적 품절
- 2026년 9월 08일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 30 - 720 | ₩485.04 | ₩14,551.20 |
| 750 - 1470 | ₩471.88 | ₩14,173.32 |
| 1500 + | ₩466.24 | ₩13,970.28 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 816-0649
- 제조사 부품 번호:
- PBHV8118T,215
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 180V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 400V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum DC Current Gain hFE | 100 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 300mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | RoHS | |
| Series | PBHV8118T | |
| Width | 7.3 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 180V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 400V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum DC Current Gain hFE 100 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 300mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals RoHS | ||
Series PBHV8118T | ||
Width 7.3 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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