Nexperia PBSS5220T,215 Transistor, -2 A PNP, -20 V, 3-Pin SOT-23
- RS 제품 번호:
- 518-1823
- 제조사 부품 번호:
- PBSS5220T,215
- 제조업체:
- Nexperia
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩4,855.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 740 | ₩485.55 | ₩4,855.50 |
| 750 + | ₩471.90 | ₩4,719.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 518-1823
- 제조사 부품 번호:
- PBSS5220T,215
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -2A | |
| Maximum Collector Emitter Voltage Vceo | -20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 100MHz | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Power Dissipation Pd | 480mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | PBSS5220T | |
| Standards/Approvals | RoHS | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -2A | ||
Maximum Collector Emitter Voltage Vceo -20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 100MHz | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Power Dissipation Pd 480mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series PBSS5220T | ||
Standards/Approvals RoHS | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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