제조사부품번호

Infineon BC847CE6327HTSA1 Transistor, 100 mA NPN, 45 V, 3-Pin SOT-23

RS 제품 번호:: 445-2023
제조사 부품 번호:: BC847CE6327HTSA1
제조업체:: Infineon

Infineon BC847CE6327HTSA1 Transistor, 100 mA NPN, 45 V, 3-Pin SOT-23

현재 비가용

RS는 이 제품을 더 이상 판매하지 않습니다.

RS 제품 번호:: 445-2023
제조사 부품 번호:: BC847CE6327HTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Transistor
	Maximum DC Collector Current Idc	100mA
	Maximum Collector Emitter Voltage Vceo	45V
	Package Type	SOT-23
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	50V
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	330mW
	Maximum Emitter Base Voltage VEBO	6V
	Minimum Operating Temperature	-65°C
	Maximum Operating Temperature	150°C
	Pin Count	3
	Length	1mm
	Width	2.9mm
	Standards/Approvals	RoHS, AEC Qualified
	Height	1.3mm
	Series	BC847
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type Transistor
	Maximum DC Collector Current Idc 100mA
	Maximum Collector Emitter Voltage Vceo 45V
	Package Type SOT-23
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 50V
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 330mW
	Maximum Emitter Base Voltage VEBO 6V
	Minimum Operating Temperature -65°C
	Maximum Operating Temperature 150°C
	Pin Count 3
	Length 1mm
	Width 2.9mm
	Standards/Approvals RoHS, AEC Qualified
	Height 1.3mm
	Series BC847
	Automotive Standard AEC-Q101

Infineon Transistor, 100 mA Maximum DC Collector Current, 45V Maximum Collector Emitter Voltage - BC847CE6327HTSA1

This transistor is a compact NPN type suitable for a variety of applications in electronics. Measuring 1 x 2.9 x 1.3 mm, it features a surface mount design in a SOT-23 package, making it ideal for space-constrained environments. This high-frequency transistor can operate efficiently at a maximum DC collector current of 100mA and a collector-emitter voltage of 45V, making it a versatile component in many electronic circuits.

Features & Benefits

• High current gain ensures efficient signal amplification

• Low collector-emitter saturation voltage enhances power efficiency

• Designed for single configuration for straightforward integration

• Robust maximum operating temperature of +150°C for durability

Applications

• Ideal for audio frequency input stages in circuits

• Suitable for driver in various electronic devices

• Used in automation systems for reliable performance

• Facilitates electronic component integration in compact devices

• Effective for low noise amplification between 30Hz and 15kHz

What are the electrical characteristics that affect performance?

The transistor features a collector-emitter breakdown voltage of 45V and a collector-base voltage of 50V, which define its operational limits. The maximum power dissipation is rated at 330mW, ensuring effective heat management during operation.

How does the maximum operating frequency influence its applications?

With a maximum operating frequency of 250MHz, it allows for high-speed switching in applications such as RF amplification and signal processing, making it suitable for modern electronic communication systems.

What type of mounting configurations are supported?

It is designed specifically for surface mount applications, fitting easily onto PCBs without requiring through-hole drilling, which simplifies the assembly process in compact electronic designs.