Infineon BFP740H6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin TSFP-4-1

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RS 제품 번호:
259-1452
제조사 부품 번호:
BFP740H6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

4.2V

Package Type

TSFP-4-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Emitter Base Voltage VEBO

1.2V

Maximum Transition Frequency ft

47GHz

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

44mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

160

Pin Count

4

Maximum Operating Temperature

150°C

Length

2mm

Height

0.9mm

Series

BFP

Standards/Approvals

RoHS

Width

1.25 mm

Automotive Standard

No

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.

NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA

High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA

OIP3 23.5 dBm at 5.5 GHz, 25 mA

Low profile and small form factor leadless package

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