Infineon BFP181E7764HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143
- RS 제품 번호:
- 258-7682
- 제조사 부품 번호:
- BFP181E7764HTSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 258-7682
- 제조사 부품 번호:
- BFP181E7764HTSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Power Dissipation Pd | 175mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2.9mm | |
| Height | 1mm | |
| Series | BFP181 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Power Dissipation Pd 175mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2.9mm | ||
Height 1mm | ||
Series BFP181 | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Qualification report according to AEC-Q101 available
Pb free RoHS compliant package
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