Renesas Electronics HFA3096BZ Transistor, 65 mA NPN + PNP, 8 V, 16-Pin SOIC
- RS 제품 번호:
- 235-5230
- 제조사 부품 번호:
- HFA3096BZ
- 제조업체:
- Renesas Electronics
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩21,280.00
재고있음
- 추가로 2026년 10월 05일 부터 456 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩21,280.00 |
| 5 - 9 | ₩20,880.00 |
| 10 + | ₩19,300.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 235-5230
- 제조사 부품 번호:
- HFA3096BZ
- 제조업체:
- Renesas Electronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 8V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN + PNP | |
| Pin Count | 16 | |
| Maximum Operating Temperature | 125°C | |
| Length | 9.9mm | |
| Series | HFA3096 | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Width | 6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 8V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN + PNP | ||
Pin Count 16 | ||
Maximum Operating Temperature 125°C | ||
Length 9.9mm | ||
Series HFA3096 | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Width 6mm | ||
Automotive Standard No | ||
The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
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