STMicroelectronics Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220
- RS 제품 번호:
- 188-8269
- 제조사 부품 번호:
- BUL1102EFP
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩84,000.00
재고있음
- 1,600 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩1,680.00 | ₩84,000.00 |
| 100 - 150 | ₩1,630.00 | ₩81,480.00 |
| 200 + | ₩1,580.00 | ₩79,040.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8269
- 제조사 부품 번호:
- BUL1102EFP
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 12V | |
| Minimum DC Current Gain hFE | 12 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 10.4mm | |
| Height | 30.6mm | |
| Width | 4.6mm | |
| Standards/Approvals | No | |
| Series | BUL1102E | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 12V | ||
Minimum DC Current Gain hFE 12 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 10.4mm | ||
Height 30.6mm | ||
Width 4.6mm | ||
Standards/Approvals No | ||
Series BUL1102E | ||
Automotive Standard No | ||
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
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