onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS 제품 번호:
- 184-4959
- 제조사 부품 번호:
- MJB44H11G
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩14,781.00
재고있음
- 추가로 2026년 5월 25일 부터 110 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,478.10 | ₩14,781.00 |
| 20 - 20 | ₩1,439.10 | ₩14,391.00 |
| 30 + | ₩1,421.55 | ₩14,215.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 184-4959
- 제조사 부품 번호:
- MJB44H11G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | No | |
| Length | 11.05mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals No | ||
Length 11.05mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
관련된 링크들
- STMicroelectronics MJB44H11T4-A Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- onsemi Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- onsemi MJB41CG Transistor, 6 A NPN, 100 V dc, 3-Pin TO-263
- STMicroelectronics Bipolar Transistor, 20 A NPN, 80 V, 3-Pin TO-263
- onsemi Transistor, 6 A NPN, 100 V dc, 3-Pin TO-263
- onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- onsemi MJB42CT4G Transistor, -6 A PNP, -100 V, 3-Pin TO-263
