onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218
- RS 제품 번호:
- 184-4188
- 제조사 부품 번호:
- BDV64BG
- 제조업체:
- onsemi
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩108,060.00
재고있음
- 360 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩3,602.00 | ₩108,078.00 |
| 150 - 270 | ₩3,458.00 | ₩103,758.00 |
| 300 + | ₩3,314.00 | ₩99,438.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 184-4188
- 제조사 부품 번호:
- BDV64BG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum DC Current Gain hFE | 1000 | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Series | BDV64B | |
| Height | 41.91mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 125W | ||
Minimum DC Current Gain hFE 1000 | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Series BDV64B | ||
Height 41.91mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
관련된 링크들
- onsemi Transistor, -40 A PNP, -100 V, 3-Pin TO-218
- onsemi MJH6287G Transistor, -40 A PNP, -100 V, 3-Pin TO-218
- onsemi TIP32BG Transistor, -3 A PNP, -80 V, 3-Pin TO-220
- onsemi Bipolar Transistor, -10 A PNP, -100 V, 3-Pin DPAK
- onsemi NJVMJK32CTWG Bipolar Transistor, 3 A PNP, 4-Pin SOT-669
- onsemi Bipolar Transistor, -500 mA PNP, -300 V, 3-Pin TO-225
- onsemi MJD42CG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin DPAK
- onsemi Bipolar Transistor, -1 A PNP, -20 V, 4-Pin SOT-223