onsemi MUN5335DW1T1G Digital Transistor, 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin
- RS 제품 번호:
- 184-1373
- 제조사 부품 번호:
- MUN5335DW1T1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 100 units)*
₩13,845.00
재고있음
- 추가로 2026년 4월 27일 부터 14,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 100 - 700 | ₩138.45 | ₩13,903.50 |
| 800 - 1400 | ₩136.50 | ₩13,689.00 |
| 1500 + | ₩134.55 | ₩13,396.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 184-1373
- 제조사 부품 번호:
- MUN5335DW1T1G
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Complementary Bias Resistor Transistors | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Maximum Power Dissipation Pd | 385mW | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | NPN + PNP | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Complementary Bias Resistor Transistors | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Maximum Power Dissipation Pd 385mW | ||
Maximum Continuous Collector Current Ic 100mA | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity NPN + PNP | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free
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