onsemi Transistor, -25 A PNP, -260 V, 5-Pin TO-264
- RS 제품 번호:
- 184-1049
- 제조사 부품 번호:
- NJL1302DG
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 25 units)*
₩159,997.50
일시적 품절
- 75 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 25 - 25 | ₩6,399.90 | ₩159,978.00 |
| 50 - 75 | ₩6,259.50 | ₩156,487.50 |
| 100 + | ₩6,121.05 | ₩153,036.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 184-1049
- 제조사 부품 번호:
- NJL1302DG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -25A | |
| Maximum Collector Emitter Voltage Vceo | -260V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 260V | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 45 | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 5 | |
| Length | 20.02mm | |
| Standards/Approvals | No | |
| Height | 46.79mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -25A | ||
Maximum Collector Emitter Voltage Vceo -260V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 260V | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 45 | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 5 | ||
Length 20.02mm | ||
Standards/Approvals No | ||
Height 46.79mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor has been designed to eliminate thermal equilibrium LAG time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device.
Thermally matched bias diode to eliminate thermal runaway
Instant thermal bias tracking for superior sound quality
Absolute Thermal Integrity
High safe operating area
Pb-Free Packages are Available
Applications:
High-fidelity consumer audio products
Professional audio amplifiers
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