Nexperia Transistor, -4 A PNP, -80 V, 4-Pin UPAK
- RS 제품 번호:
- 166-0257
- 제조사 부품 번호:
- PBSS5480X,135
- 제조업체:
- Nexperia
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대량 구매 할인 기용 가능
Subtotal (1 reel of 4000 units)*
₩1,505,400.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 - 16000 | ₩376.35 | ₩1,504,620.00 |
| 20000 + | ₩368.55 | ₩1,474,980.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-0257
- 제조사 부품 번호:
- PBSS5480X,135
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -4A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Transition Frequency ft | 125MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | PBSS5480X | |
| Height | 1.5mm | |
| Length | 4.6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -4A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Transition Frequency ft 125MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series PBSS5480X | ||
Height 1.5mm | ||
Length 4.6mm | ||
Automotive Standard No | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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