Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1

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Subtotal (1 pack of 10 units)*

₩27,899.20

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10 - 10₩2,789.92₩27,899.20
20 - 20₩2,720.36₩27,203.60
30 +₩2,679.00₩26,790.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
110-7168
제조사 부품 번호:
IDP30E120XKSA1
제조업체:
Infineon
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브랜드

Infineon

Maximum Forward Current If

30A

Product Type

Silicon Junction

Diode Configuration

Single

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-220

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

102A

Maximum Forward Voltage Vf

2.15V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

138W

Peak Reverse Recovery Time trr

380ns

Maximum Peak Reverse Repetitive Voltage Vrrm

1200V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.2mm

Height

15.95mm

Automotive Standard

No

Fast Switching Emitter Controlled Diodes, Infineon


The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Diodes and Rectifiers, Infineon


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