Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- RS 제품 번호:
- 110-7168
- 제조사 부품 번호:
- IDP30E120XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩27,899.20
일시적 품절
- 2026년 7월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,789.92 | ₩27,899.20 |
| 20 - 20 | ₩2,720.36 | ₩27,203.60 |
| 30 + | ₩2,679.00 | ₩26,790.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 110-7168
- 제조사 부품 번호:
- IDP30E120XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Forward Current If | 30A | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Peak Reverse Recovery Time trr | 380ns | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 102A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Maximum Power Dissipation Pd | 138W | |
| Maximum Forward Voltage Vf | 2.15V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Width | 4.5 mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Forward Current If 30A | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Peak Reverse Recovery Time trr 380ns | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 102A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Maximum Power Dissipation Pd 138W | ||
Maximum Forward Voltage Vf 2.15V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Width 4.5 mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
관련된 링크들
- Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220
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- Infineon Switching Diode, Single, 18 A, 3-Pin 1200 V TO-220 IDP18E120XKSA1
- Infineon Switching Diode, Fast Switching, 12 A, 3-Pin 1200 V TO-220 IDP12E120XKSA1
- Infineon 650 V 60 A Diode Switching 3-Pin TO-220 IDP30E65D1XKSA1
- Infineon 650 V 60 A Diode Switching 2-Pin TO-220 IDP30E65D2XKSA1
- Infineon Silicon Junction, Single, 30 A, 3-Pin 650 V TO-247 IDW30C65D1XKSA1
