Renesas Electronics SRAM Memory- 4 MB
- RS 제품 번호:
- 254-4966
- 제조사 부품 번호:
- 71V416S12PHGI
- 제조업체:
- Renesas Electronics
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대량 구매 할인 기용 가능
Subtotal (1 tray of 135 units)*
₩1,772,539.20
일시적 품절
- 2026년 6월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 135 - 135 | ₩13,129.92 | ₩1,772,565.52 |
| 270 + | ₩12,866.72 | ₩1,737,108.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 254-4966
- 제조사 부품 번호:
- 71V416S12PHGI
- 제조업체:
- Renesas Electronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Memory Size | 4MB | |
| Product Type | SRAM Memory | |
| Organisation | 256k x 16 | |
| Number of Words | 262144 Words | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 12ns | |
| Address Bus Width | 18bit | |
| Minimum Supply Voltage | 3V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Length | 9mm | |
| Standards/Approvals | JEDECLVTTL-Compatible | |
| Height | 9mm | |
| Series | 71V416 | |
| Supply Current | 200mA | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Memory Size 4MB | ||
Product Type SRAM Memory | ||
Organisation 256k x 16 | ||
Number of Words 262144 Words | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 12ns | ||
Address Bus Width 18bit | ||
Minimum Supply Voltage 3V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Length 9mm | ||
Standards/Approvals JEDECLVTTL-Compatible | ||
Height 9mm | ||
Series 71V416 | ||
Supply Current 200mA | ||
Automotive Standard No | ||
The Renesas Electronics asynchronous static RAM center pwr & gnd pinout 4,194,304-bit high-speed static RAM organized as 256K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. It has an output enable pin which operates as fast as 5 ns, with address access times as fast as 10 ns. It is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.
256K x 16 advanced high-speed CMOS static RAM
JEDEC center power / GND pinout for reduced noise.
One chip select plus one output enable pin
Bidirectional data inputs and outputs directly LVTTL-compatible
Low power consumption via chip deselect
Upper and lower byte Enable Pins
Single 3.3 V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.
Green parts available, see ordering information
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