Infineon SRAM, CY7C1021D-10VXI- 1 MB

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 SRAM 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
194-8911
제조사 부품 번호:
CY7C1021D-10VXI
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Memory Size

1MB

Product Type

SRAM

Organisation

64K x 16 bit

Number of Words

64K

Number of Bits per Word

16

Maximum Random Access Time

10ns

Minimum Supply Voltage

5V

Timing Type

Asynchronous

Maximum Supply Voltage

3.6V

Mount Type

Through Hole

Minimum Operating Temperature

-40°C

Package Type

SOJ

Pin Count

44

Maximum Operating Temperature

85°C

Width

10.29 mm

Length

28.7mm

Height

3.05mm

Standards/Approvals

RoHS

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.

관련된 링크들