Infineon SRAM Memory Chip, CY7C1018DV33-10VXIT- 1Mbit
- RS 제품 번호:
- 193-8461
- 제조사 부품 번호:
- CY7C1018DV33-10VXIT
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩24,590.40
재고있음
- 추가로 2025년 12월 29일 부터 520 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩4,918.08 | ₩24,590.40 |
| 250 - 495 | ₩4,809.04 | ₩24,045.20 |
| 500 + | ₩4,707.52 | ₩23,537.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 193-8461
- 제조사 부품 번호:
- CY7C1018DV33-10VXIT
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128k x 8 bit | |
| Number of Words | 128k | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 10ns | |
| Address Bus Width | 8bit | |
| Clock Frequency | 1MHz | |
| Timing Type | Asynchronous | |
| Mounting Type | Through Hole | |
| Package Type | SOJ | |
| Pin Count | 32 | |
| Dimensions | 0.810 x 0.292 x 0.103in | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 2.62mm | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 3 V | |
| Width | 7.42mm | |
| Length | 20.57mm | |
| Maximum Operating Temperature | +85 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 1Mbit | ||
Organisation 128k x 8 bit | ||
Number of Words 128k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 10ns | ||
Address Bus Width 8bit | ||
Clock Frequency 1MHz | ||
Timing Type Asynchronous | ||
Mounting Type Through Hole | ||
Package Type SOJ | ||
Pin Count 32 | ||
Dimensions 0.810 x 0.292 x 0.103in | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 2.62mm | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 3 V | ||
Width 7.42mm | ||
Length 20.57mm | ||
Maximum Operating Temperature +85 °C | ||
- COO (Country of Origin):
- CN
Pin- and function-compatible with CY7C1018CV33
High speed
tAA = 10 ns
Low Active Power
ICC = 60 mA @ 10 ns
Low CMOS Standby Power
ISB2 = 3 mA
2.0V Data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Center power/ground pinout
Easy memory expansion with CE and OE options
Available in Pb-free 32-pin 300-Mil wide Molded SOJ
High speed
tAA = 10 ns
Low Active Power
ICC = 60 mA @ 10 ns
Low CMOS Standby Power
ISB2 = 3 mA
2.0V Data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Center power/ground pinout
Easy memory expansion with CE and OE options
Available in Pb-free 32-pin 300-Mil wide Molded SOJ
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
관련된 링크들
- Infineon SRAM Memory Chip, CY7C1018DV33-10VXIT- 1Mbit
- Infineon SRAM Memory Chip, CY7C109D-10VXIT- 1Mbit
- Infineon SRAM Memory Chip, CY7C1021DV33-10ZSXIT- 1Mbit
- Infineon SRAM Memory Chip, CY62148ELL-55SXIT- 4Mbit
- Infineon SRAM Memory Chip, CY62148ELL-55SXI- 4Mbit
- Infineon SRAM Memory Chip, CY14B101PA-SFXI- 1Mbit
- Cypress Semiconductor SRAM Memory Chip, CY62128ELL-45SXI- 1Mbit
- Infineon SRAM Memory Chip, CY7C1041GN-10ZSXI- 4Mbit
