Infineon SRAM, CY7C1049GN-10VXI- 4 MB

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Subtotal (1 pack of 2 units)*

₩12,596.00

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한팩당*
2 - 4₩6,298.00₩12,596.00
6 - 8₩6,157.00₩12,314.00
10 +₩6,025.40₩12,050.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
182-3386
제조사 부품 번호:
CY7C1049GN-10VXI
제조업체:
Infineon
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브랜드

Infineon

Product Type

SRAM

Memory Size

4MB

Organisation

512k x 16 Bit

Number of Words

512K

Number of Bits per Word

8

Maximum Random Access Time

10ns

Timing Type

Asynchronous

Mount Type

Surface

Package Type

SOJ

Pin Count

36

Length

0.93mm

Standards/Approvals

RoHS

Height

0.12mm

Width

0.4 mm

COO (Country of Origin):
US
CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.

High speed

tAA = 10 ns

Low Active and standby currents

Active current: ICC = 38 mA typical

Standby current: ISB2 = 6 mA typical

Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and

4.5 V to 5.5 V

1.0 V data retention

TTL-compatible inputs and outputs

Pb-free 36-pin SOJ and 44-pin TSOP II packages

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