Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

RS 제품 번호:: 230-8430
제조사 부품 번호:: AS4C4M16SA-6TIN
제조업체:: Alliance Memory

Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

100 <재고있음> 5-9영업일내 홍콩 발송

단가 개당가격(5개가 1팩안에)

₩4,241.529

수량	한팩당	한팩당*
5 - 5	₩4,241.529	₩21,204.196
10 - 20	₩4,113.887	₩20,569.433
25 - 45	₩3,989.694	₩19,950.193
50 - 70	₩3,870.676	₩19,351.653
75 +	₩3,753.382	₩18,770.362

*다른 단위에 대한 가격 표시

RS 제품 번호:: 230-8430
제조사 부품 번호:: AS4C4M16SA-6TIN
제조업체:: Alliance Memory

참조 문서

Datasheet - AS4C4M16SA-6TIN

제정법과 컴플라이언스

제품 세부 사항

The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Fast access time from clock: 4.5/5.4/5.4 ns
Fast clock rate: 200/166/143 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank

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사양

속성	값
Memory Size	64Mbit
SDRAM Class	DDR
Organisation	4M x 16
Data Rate	200MHz
Data Bus Width	16bit
Address Bus Width	13bit
Number of Bits per Word	16bit
Maximum Random Access Time	5.4ns
Number of Words	4M
Mounting Type	Surface Mount
Package Type	TSOP
Pin Count	54
Dimensions	22.35 x 10.29 x 1.2mm
Height	1.2mm
Length	22.35mm
Maximum Operating Temperature	+85 °C
Width	10.29mm
Minimum Operating Supply Voltage	3 V
Maximum Operating Supply Voltage	3.6 V
Minimum Operating Temperature	-40 °C