제조사부품번호

Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

RS 제품 번호:: 813-0828
제조사 부품 번호:: MBRB10100-E3/8W
제조업체:: Vishay

Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩8,366.00

마지막 RS 재고

최종적인 2,200 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 195	₩1,673.20	₩8,366.00
200 - 395	₩1,643.12	₩8,215.60
400 +	₩1,613.04	₩8,065.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 813-0828
제조사 부품 번호:: MBRB10100-E3/8W
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Mount Type	Surface
	Product Type	Diode
	Package Type	TO-263
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	100V
	Diode Configuration	Single
	Series	MBR
	Rectifier Type	Schottky
	Pin Count	3
	Peak Non-Repetitive Forward Surge Current Ifsm	150A
	Peak Reverse Current Ir	6mA
	Maximum Forward Voltage Vf	800mV
	Minimum Operating Temperature	-65°C
	Maximum Operating Temperature	150°C
	Diameter	3.74 mm
	Length	10.45mm
	Height	4.83mm
	Width	9.14 mm
	Standards/Approvals	RoHS 2002/95/EC, J-STD-020, J-STD-002, JESD 22-B106, JESD 22-B102, JESD 201 Class 1A, WEEE 2002/96/EC, UL 94 V-0
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Mount Type Surface
	Product Type Diode
	Package Type TO-263
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 100V
	Diode Configuration Single
	Series MBR
	Rectifier Type Schottky
	Pin Count 3
	Peak Non-Repetitive Forward Surge Current Ifsm 150A
	Peak Reverse Current Ir 6mA
	Maximum Forward Voltage Vf 800mV
	Minimum Operating Temperature -65°C
	Maximum Operating Temperature 150°C
	Diameter 3.74 mm
	Length 10.45mm
	Height 4.83mm
	Width 9.14 mm
	Standards/Approvals RoHS 2002/95/EC, J-STD-020, J-STD-002, JESD 22-B106, JESD 22-B102, JESD 201 Class 1A, WEEE 2002/96/EC, UL 94 V-0
	Automotive Standard No

COO (Country of Origin):: CN

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features

Patented Trench Structure

Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters

High power density and low forward voltage

Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

Features

Schottky Rectifiers, Vishay Semiconductor

관련된 링크들