Vishay 1000V 1A, Silicon Junction Diode, 2-Pin DO-204AL 1N4007GP-E3/54
- RS 제품 번호:
- 700-3665P
- 제조사 부품 번호:
- 1N4007GP-E3/54
- 제조업체:
- Vishay
일시 품절-문의: krenquiry@rs-components.com
추가완료!
단가 개당(릴로 공급됨) 150pcs 이하는 STRIP 포장
₩507.121
| 수량 | 한팩당 |
| 1400 - 2700 | ₩507.121 |
| 2750 + | ₩496.771 |
- RS 제품 번호:
- 700-3665P
- 제조사 부품 번호:
- 1N4007GP-E3/54
- 제조업체:
- Vishay
제정법과 컴플라이언스
제품 세부 사항
Vishay 1N4001GP-1N4007GP Glass Passivated Junction Plastic Rectifier
Benefits:
• Superectifier structure for high reliability application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Cost-effective
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Cost-effective
Features:
• DO-204AL (DO-41), molded epoxy over glass body
• Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
• Polarity: Color band denotes cathode end
• Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
• Polarity: Color band denotes cathode end
Typical Applications:
• High frequency inverters
• Free wheeling diodes
• Polarity protection diodes for consumer and automotive applications
• Free wheeling diodes
• Polarity protection diodes for consumer and automotive applications
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Diodes and Rectifiers, Vishay Semiconductor
사양
속성 | 값 |
|---|---|
| Mounting Type | Through Hole |
| Package Type | DO-204AL |
| Maximum Continuous Forward Current | 1A |
| Peak Reverse Repetitive Voltage | 1000V |
| Diode Configuration | Single |
| Series | 1N4007 |
| Rectifier Type | Switching |
| Diode Type | Silicon Junction |
| Pin Count | 2 |
| Maximum Forward Voltage Drop | 1.1V |
| Number of Elements per Chip | 1 |
| Diode Technology | Silicon Junction |
| Peak Reverse Recovery Time | 2µs |
| Diameter | 2.7mm |
| Peak Non-Repetitive Forward Surge Current | 30A |