Vishay 650 V 20 A Rectifier & Schottky Diode MOS Barrier Schottky 3-Pin TO-220AC 2L VS-3C20ET07T-M3
- RS 제품 번호:
- 279-9482
- 제조사 부품 번호:
- VS-3C20ET07T-M3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩11,881.60
재고있음
- 996 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩11,881.60 |
| 10 - 24 | ₩11,524.40 |
| 25 - 49 | ₩11,186.00 |
| 50 - 99 | ₩10,847.60 |
| 100 + | ₩10,528.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 279-9482
- 제조사 부품 번호:
- VS-3C20ET07T-M3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-220AC 2L | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | VS-3C20ET07 | |
| Diode Configuration | Single | |
| Rectifier Type | MOS Barrier Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.5V | |
| Peak Reverse Current Ir | 100μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 110A | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.51mm | |
| Height | 29.27mm | |
| Standards/Approvals | JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | |
| Width | 4.65 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-220AC 2L | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series VS-3C20ET07 | ||
Diode Configuration Single | ||
Rectifier Type MOS Barrier Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.5V | ||
Peak Reverse Current Ir 100μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 110A | ||
Maximum Operating Temperature 175°C | ||
Length 10.51mm | ||
Height 29.27mm | ||
Standards/Approvals JESD 201 Class 2 whisker test, RoHS and AEC-Q101 | ||
Width 4.65 mm | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
관련된 링크들
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