Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK
- RS 제품 번호:
- 244-0894
- 제조사 부품 번호:
- IDDD20G65C6XTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 1700 units)*
₩9,262,008.00
일시적 품절
- 2026년 6월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1700 - 1700 | ₩5,448.24 | ₩9,261,049.20 |
| 3400 - 3400 | ₩5,339.20 | ₩9,076,000.80 |
| 5100 + | ₩5,179.40 | ₩8,803,701.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-0894
- 제조사 부품 번호:
- IDDD20G65C6XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Schottky Barrier Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDDD20G65C6 | |
| Rectifier Type | Schottky | |
| Pin Count | 10 | |
| Peak Reverse Current Ir | 2μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Schottky Barrier Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDDD20G65C6 | ||
Rectifier Type Schottky | ||
Pin Count 10 | ||
Peak Reverse Current Ir 2μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The CoolSiC™ generation 6(G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
관련된 링크들
- Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK IDDD20G65C6XTMA1
- Infineon 650 V 4 A Schottky Barrier Diode Schottky 10-Pin HDSOP
- Infineon 650 V 16 A Schottky Barrier Diode Schottky 10-Pin HDSOP
- Infineon 650 V 4 A Schottky Barrier Diode Schottky 10-Pin HDSOP IDDD04G65C6XTMA1
- Infineon 650 V 16 A Schottky Barrier Diode Schottky 10-Pin HDSOP IDDD16G65C6XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 8 A Diode Schottky 10-Pin HDSOP
