STMicroelectronics 1200 V 15 A Diode 2-Pin D2PAK
- RS 제품 번호:
- 219-4235
- 제조사 부품 번호:
- STPSC15H12G2-TR
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩9,779,760.00
일시적 품절
- 2026년 8월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩9,779.76 | ₩9,778,820.00 |
| 2000 - 9000 | ₩9,484.60 | ₩9,485,352.00 |
| 10000 + | ₩9,200.72 | ₩9,200,908.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 219-4235
- 제조사 부품 번호:
- STPSC15H12G2-TR
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPSC15H12G2-TR | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 45μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Length | 15.95mm | |
| Width | 10.98 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPSC15H12G2-TR | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 45μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Length 15.95mm | ||
Width 10.98 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
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