STMicroelectronics 1200 V 10 A Diode 3-Pin DPAK STPSC10H12B2-TR

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RS 제품 번호:
210-8743
제조사 부품 번호:
STPSC10H12B2-TR
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

TO-252

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Pin Count

3

Peak Non-Repetitive Forward Surge Current Ifsm

60A

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

2.25V

Peak Reverse Current Ir

30μA

Maximum Operating Temperature

175°C

Height

2.2mm

Width

6.4mm

Standards/Approvals

RoHS

Length

9.35mm

Automotive Standard

No

The STMicroelectronics 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

Operating Tj from -40 °C to 175 °C

Low VF

DPAK HV creepage distance (anode to cathode) = 3 mm min.

ECOPACK2 compliant

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