onsemi 650 V 14.4 A Schottky Diode Schottky 3-Pin TO-247 FFSH1265BDN-F085
- RS 제품 번호:
- 195-8718
- 제조사 부품 번호:
- FFSH1265BDN-F085
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩58,016.80
마지막 RS 재고
- 최종적인 440 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩5,801.68 | ₩58,016.80 |
| 50 + | ₩5,732.12 | ₩57,321.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-8718
- 제조사 부품 번호:
- FFSH1265BDN-F085
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 14.4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 510A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 14.4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 510A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 12A, 650V, D2, TO-247-3L Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175C
PPP Capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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